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74LVC540ADWR2G Fiches technique(PDF) 5 Page - ON Semiconductor |
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74LVC540ADWR2G Fiches technique(HTML) 5 Page - ON Semiconductor |
5 / 9 page 74LVC540A www.onsemi.com 5 AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) Symbol Parameter Conditions −40 5C to +855C −40 5C to +1255C Unit Min Typ5 Max Min Typ5 Max tpd Propagation Delay (Note 6) nDn to nOn VCC = 1.2 V − 18.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 − 16.4 1.0 − 16.4 VCC = 2.3 V to 2.7 V 1.0 − 7.8 1.0 − 7.8 VCC = 2.7 V 1.0 − 7.1 1.0 − 7.1 VCC = 3.0 V to 3.6 V 1.0 − 5.3 1.0 − 5.3 ten Enable Time (Note 7) nOE to nOn VCC = 1.2 V − 20.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 − 16.5 1.0 − 16.5 VCC = 2.3 V to 2.7 V 1.0 − 10.5 1.0 − 10.5 VCC = 2.7 V 1.0 − 8.0 1.0 − 8.0 VCC = 3.0 V to 3.6 V 1.0 − 6.6 1.0 − 6.6 tdis Disable Time (Note 8) nOE to nOn VCC = 1.2 V − 18.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 − 15.9 1.0 − 15.9 VCC = 2.3 V to 2.7 V 1.0 − 9.0 1.0 − 9.0 VCC = 2.7 V 1.0 − 8.2 1.0 − 8.2 VCC = 3.0 V to 3.6 V 1.0 − 7.4 1.0 − 7.4 tsk(0) Output Skew Time (Note 9) − − 1.0 − − 1.5 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Typical values are measured at TA = 25 °C and VCC = 3.3 V, unless stated otherwise. 6. tpd is the same as tPLH and tPHL. 7. ten is the same as tPZL and tPZH. 8. tdis is the same as tPLZ and tPHZ. 9. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition TA = +25°C Unit Min Typ Max VOLP Dynamic LOW Peak Voltage (Note 10) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V VOLV Dynamic LOW Valley Voltage (Note 10) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 10. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 5.0 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 7.0 pF CPD Power Dissipation Capacitance (Note 11) Per input; VI = GND or VCC pF VCC = 1.65 V to 1.95 V 7.7 VCC = 2.3 V to 2.7 V 11.3 VCC = 3.0 V to 3.6 V 14.4 11. CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD * VCC2 x fi * N + S (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching S(CL * VCC2 x fo) = sum of the outputs. |
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