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LM2650MX-ADJ Fiches technique(PDF) 3 Page - National Semiconductor (TI) |
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LM2650MX-ADJ Fiches technique(HTML) 3 Page - National Semiconductor (TI) |
3 / 11 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (All voltages are referenced to the PGND and GND pins.) DC Voltage at PV IN and VIN 20V DC Voltage at SD, SLEEP LOGIC and SYNC 15V DC current into SW ±7.5A Junction Temperature Limited by the IC DC Power Dissipation (Note 2) 1.28W Storage Temperature −65˚C to +150˚C Soldering Time, Temperature (Note 3) Wave (4 seconds) Infrared (10 seconds) Vapor Phase (75 seconds) 260˚C 240˚C 219˚C ESD Susceptibility (Note 4) 1.3 kV Operating Ratings (Note 1) Supply Voltage Range (PV IN and V IN) 4.5V to 18V Junction Temperature Range −40˚C to +125˚C Electrical Characteristics V PVIN = 15V, VSLEEP LOGIC = 0V and VSD = 0V unless superseded under Conditions. Typicals and limits appearing in plain type apply for T A =TJ = +25˚C. Limits appearing in boldface type apply over the full junction temperature range shown under Operating Ratings. Symbol Parameter Conditions Typ (Note 5) Limit (Note 6) Units V OUT Output Voltage R1 = 75 k Ω, 1%, R2=25 k Ω, 1%, 7.5V ≤ V PVIN ≤ 18V 0.12A ≤ I LOAD ≤ 3A 5.00 4.80/4.75 5.20/5.25 V V(min) V(max) η1 System Efficiency I LOAD = 1A, TA = 25˚C, F OSC Not Adjusted 94 % η2 System Efficiency I LOAD = 3A, TA = 25˚C, F OSC Not Adjusted 89 % V REF Reference Voltage V SLEEPLOGIC = 3V (Note 7) 1.25 1.281/1.294 1.219/1.206 V(min) V(max) I Q Quiescent Current in PWM mode V FB =VREF −20mV (Note 8) 4.0 6.50/7.0 mA mA(max) I QS Quiescent Current in Sleep mode IV FB =VREF −20mV, V SLEEPLOGIC = 3V (Note 8) 850 1.35/1.60 µA mA(max) I QSD Quiescent Current in Shutdown mode V SD =3V (Note 8) 9 20/25 µA µA(max) R DS(on) HS DC On-Resistance Drain-to-Source of the High-Side Power Switch I DS = 1A, V SLEEPLOGIC = 3V, V FB = 3V, V BOOT = 24V 130 170/245 m Ω m Ω(max) R DS(on) LS DC On-Resistance Drain-to-Source of the Low-Side Power Switch I DS = 1A, V FB =3V 125 175/245 m Ω m Ω(max) I LHS Leakage current of the High-Side Power Switch V PVIN = 18V, VSW = 0V, V SD =3V 100 10 nA µA(max) I LLS Leakage current of the Low-Side Power Switch V PVIN = 18V, VSW = 18V, V SD =3V 95 210 µA µA(max) I LIMIT Active Current Limit of the High-Side Power Switch V PVIN = 15V, V BOOT = 24V, V FB = 3V, V SLEEPLOGIC = 3V, 5.5 3.5 7.5 A A(min) A(max) F OSC Oscillator Frequency V FB =VREF −20 mV 90 80/75 100/105 kHz kHz(min) kHz(max) F MAX Maximum Oscillator Frequency I FREQ ADJ = 100µA,(Note 9) V FB =VREF −20 mV 315 270/260 360/370 kHz kHz(min) kHz(max) D MAX Maximum Duty Cycle V FB =VREF −20 mV, F OSC Not Adjusted 97 94/93 % %(min) www.national.com 3 |
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