SI4834CDY datasheet(2/14 Pages) VISHAY

No de pièce	SI4834CDY

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 68790

S09-2109-Rev. B, 12-Oct-09

Vishay Siliconix

Si4834CDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 1 mA

Ch-1

30

V

VGS = 0 V, ID = 1 mA

Ch-2

30

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

Ch-2

32

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

Ch-2

- 6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 1 mA

Ch-1

1

3

V

VDS = VGS, ID = 1 mA

Ch-2

1

3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Ch-1

100

nA

VDS = 0 V, VGS = ± 20 V

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

0.016

0.10

mA

VDS = 30 V, VGS = 0 V

Ch-2

0.001

VDS = 30 V, VGS = 0 V, TJ = 100 °C

Ch-1

1.1

10

VDS = 30 V, VGS = 0 V, TJ = 100 °C

Ch-2

0.025

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch-1

20

A

VDS = 5 V, VGS = 10 V

Ch-2

20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 8 A

Ch-1

0.0156

0.020

Ω

VGS = 10 V, ID = 8 A

Ch-2

0.0156

0.020

VGS = 4.5 V, ID = 5 A

Ch-1

0.019

0.025

VGS = 4.5 V, ID = 5 A

Ch-2

0.019

0.025

Forward Transconductanceb

gfs

VDS = 15 V, ID = 8 A

Ch-1

29

S

VDS = 15 V, ID = 8 A

Ch-2

29

Dynamica

Input Capacitance

Ciss

Channel-1

VDS = 15 V, VGS = 0 V, f = 1 MHz

Channel-2

VDS = 15 V, VGS = 0 V, f = 1 MHz

Ch-1

950

pF

Ch-2

950

Output Capacitance

Coss

Ch-1

185

Ch-2

155

Reverse Transfer Capacitance

Crss

Ch-1

65

Ch-2

65

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 8 A

Ch-1

16.5

25

nC

VDS = 15 V, VGS = 10 V, ID = 8 A

Ch-2

16.5

25

Channel-1

VDS = 15 V, VGS = 4.5 V, ID = 8 A

Channel-2

VDS = 15 V, VGS = 4.5 V, ID = 8 A

Ch-1

7.3

11

Ch-2

7.3

11

Gate-Source Charge

Qgs

Ch-1

2.7

Ch-2

2.7

Gate-Drain Charge

Qgd

Ch-1

2.1

Ch-2

2.1

Gate Resistance

Rg

f = 1 MHz

Ch-1

0.2

1.2

2.4

Ω

Ch-2

0.2

1.2

2.4

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