SI7218DN datasheet(1/13 Pages) VISHAY

No de pièce	SI7218DN

Description	Dual N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si7218DN

Document Number: 73958

S-83044-Rev. C, 22-Dec-08

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

APPLICATIONS

•

Synchronous Rectification

•

Notebook System Power

•

POL

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

Qg (Typ.)

30

0.025 at VGS = 10 V

24

5 nC

0.033 at VGS = 4.5 V

21

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D2

3.30 mm

PowerPAK® 1212-8

Bottom View

Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free)

Si7218DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 94 °C/W.

f. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

24

A

TC = 70 °C

19

TA = 25 °C

8a, b

TA = 70 °C

6.5a, b

Pulsed Drain Current

IDM

35

Continuous Source-Drain Diode Current

TC = 25 °C

IS

19

TA = 25 °C

2.2a, b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5

mJ

Maximum Power Dissipation

TC = 25 °C

PD

23

W

TC = 70 °C

14.8

TA = 25 °C

2.6a, b

TA = 70 °C

1.7a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, e

t

≤ 10 s

RthJA

38

48

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

4.3

5.4

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
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Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
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