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6N60F Fiches technique(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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6N60F Fiches technique(HTML) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
1 / 2 page - 页码 - Rev. 14-1 http:// www.perfectway.cn 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB ITO-220AB 6N60 6N60F TO-263 TO-262 6N60B 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 6N60 UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ± 30 Continuous Drain Current ID 6 A Pulsed Drain Current(Note1) IDM 24 Single Pulse Avalanche Energy (Note 2) EAS 440 mJ Avalanche Current(Note1) IAR 10.4 A Repetitive Avalanche Energy (Note1) EAR 13 mJ Reverse Diode dV/dt (Note 3) dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260 ℃ Mounting Torque 6-32 or M3 screw 10 lbf·in 1.1 N·m Thermal Characteristics Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units Maximum Junction-to-Case RthJC 1.25 1 1 ℃ /W Maximum Power Dissipation TC=25℃ PD 100 125 125 W |
Numéro de pièce similaire - 6N60F |
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Description similaire - 6N60F |
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