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AUIRFR5305TRL Fiches technique(PDF) 1 Page - Infineon Technologies AG |
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AUIRFR5305TRL Fiches technique(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page AUIRFR5305 AUIRFU5305 VDSS -55V RDS(on) max. 0.065 ID -31A Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 1 2015-10-12 HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com AUTOMOTIVE GRADE Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31 A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 IDM Pulsed Drain Current -110 PD @TC = 25°C Maximum Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy (Thermally Limited) 280 mJ IAR Avalanche Current -16 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.4 °C/W RJA Junction-to-Ambient ( PCB Mount) ––– 50 RJA Junction-to-Ambient ––– 110 D-Pak AUIRFR5305 I-Pak AUIRFU5305 Base part number Package Type Standard Pack Form Quantity AUIRFU5305 I-Pak Tube 75 AUIRFU5305 AUIRFR5305 D-Pak Tube 75 AUIRFR5305 Tape and Reel Left 3000 AUIRFR5305TRL Orderable Part Number G D S Gate Drain Source G S D D S G D |
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