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S29GL512T10DHAyyx Fiches technique(PDF) 2 Page - Cypress Semiconductor

No de pièce S29GL512T10DHAyyx
Description  1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)
Download  105 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL512T10DHAyyx Fiches technique(HTML) 2 Page - Cypress Semiconductor

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Document Number: 002-00247 Rev. *G
Page 2 of 105
S29GL01GT, S29GL512T
Performance Summary
Performance Summary for Operating Temperature Range of
40 °C to +85 °C
Performance Summary Operating Temperature Range of
40 °C to +105 °C
Performance Summary Operating Temperature Range of
40 °C to +125 °C
Typical Program and Erase Rates
Maximum Current Consumption
Maximum Read Access Times
Density
Voltage Range
Random Access
Time (tACC)
Page Access Time
(tPACC)
CE# Access Time
(tCE)
OE# Access Time
(tOE)
512 Mb
Full VCC = VIO
100
15
100
25
Versatile I/O VIO
110
25
110
35
1 Gb
Full VCC = VIO
100
15
100
25
Versatile I/O VIO
110
25
110
35
Maximum Read Access Times
Density
Voltage Range
Random Access
Time (tACC)
Page Access Time
(tPACC)
CE# Access Time
(tCE)
OE# Access Time
(tOE)
512 Mb
Full VCC = VIO
110
15
110
25
Versatile I/O VIO
120
25
120
35
1 Gb
Full VCC = VIO
110
15
110
25
Versatile I/O VIO
120
25
120
35
Maximum Read Access Times
Density
Voltage Range
Random Access Time
(tACC)
Page Access Time
(tPACC)
CE# Access Time
(tCE)
OE# Access Time
(tOE)
512 Mb
Full VCC = VIO
120
15
120
25
Versatile I/O VIO
130
25
130
35
1 Gb
Full VCC = VIO
120
15
120
25
Versatile I/O VIO
130
25
130
35
Operation
40 °C to +85 °C
40 °C to +105 °C
40 °C to +125 °C
Buffer Programming (512 bytes)
1.14 MB/s
1.14 MB/s
1.14 MB/s
Sector Erase (128 kbytes)
245 kB/s
245 kB/s
245 kB/s
Operation
40 °C to +85 °C
40 °C to +105 °C
40 °C to +125 °C
Active Read at 5 MHz, 30 pF
60 mA
60 mA
60 mA
Program
100 mA
100 mA
100 mA
Erase
100 mA
100 mA
100 mA
Standby
100 μA
200 μA
215 μA


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