S29GL01GT10FHIyyx datasheet(45/105 Pages) CYPRESS

No de pièce	S29GL01GT10FHIyyx

Description	1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)

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Fabricant	CYPRESS [Cypress Semiconductor]

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45 / 105 page

Document Number: 002-00247 Rev. *G

Page 45 of 105

S29GL01GT, S29GL512T

Notes:

1. Not 100% tested.

2. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycle, and a random data pattern.

3. Effective write buffer specification is based upon a 512-byte write buffer operation.

4. 512-byte load is not supported in x8 mode.

5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.

6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 7.1, Command Definitions x16 on page 48 for

further information on command definitions.

Table 5.8 Embedded Algorithm Characteristics (

40 °C to +105 °C)

Parameter

Min

Typ

(Note 2)

Max (Note 3)

Unit

Comments

Sector Erase Time 128 kbyte

535

3500

ms

Includes pre-programming prior to erasure (Note 7)

Chip Erase

GL512T

274

1792

(Note 1)

s

GL01GT

548

3584

(Note 1)

Single Word Programming Time (Note 1)

160

1050

µs

Buffer Programming Time

2-byte (Note 1)

160

1050

µs

32-byte (Note 1)

195

1050

64-byte (Note 1)

219

1050

128-byte

(Note 1)

258

1050

256-byte

(Note 1)

327

1050

512-byte

(Note 1)

451

1050

Effective Write Buffer

Program Operation per

Word

512-byte

1.76

µs

Sector Programming Time 128 kB

(full Buffer Programming)

115.4

269

ms

(Note 8)

Erase Suspend Latency (tESL)

50

µs

Program Suspend Latency (tPSL)

50

µs

Erase Resume to next Erase Suspend (tERS)

100

µs

Minimum of 60 ns but

 typical periods are needed

for Erase to progress to completion.

Program Resume to next Program Suspend

(tPRS)

100

µs

Minimum of 60 ns but

 typical periods are needed

for Program to progress to completion.

Evaluate Erase Status (tEES)25

30

µs

Blank Check

7.6

9.0

ms

NOP (Number of Program-operations, per

Line)

1 per 16

word

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Cypress Semiconductor	S29GL01GS	1Mb / 108P	1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
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