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BFP720FESD Fiches technique(PDF) 16 Page - Infineon Technologies AG

No de pièce BFP720FESD
Description  Robust Low Noise Silicon Germanium Bipolar RF Transistor
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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BFP720FESD
Electrical Characteristics
Data Sheet
16
Revision 1.2, 2012-10-16
Notes
1. G
ms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k
2-1)1/2) for k > 1
2. In order to get the
NF
min values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3.
OIP
3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω from 0.2 MHz to 12 GHz.
Table 5-10 AC Characteristics,
V
CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum power gain
dB
Low noise operation point
Gms
–19.5
IC =5mA
High linearity operation point
Gms
–22
IC =15mA
Transducer gain
dB
ZS = ZL =50 Ω
Low noise operation point
S21
–15
IC =5mA
High linearity operation point
S21
–17
IC =15mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–0.8
IC =5mA
Associated gain
Gass
–16
IC =5mA
Linearity
dBm
ZS = ZL =50 Ω
1 dB gain compression point
OP1dB
–7
IC =15mA
3rd order intercept point
OIP3
–21
IC =15mA
Table 5-11 AC Characteristics,
V
CE = 3 V, f =10 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum power gain
dB
Low noise operation point
Gma
–14
IC =5mA
High linearity operation point
Gma
–15
IC =15mA
Transducer gain
dB
ZS = ZL =50 Ω
Low noise operation point
S21
–9
IC =5mA
High linearity operation point
S21
–11
IC =15mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–1.3
IC =5mA
Associated gain
Gass
–10
IC =5mA
Linearity
dBm
ZS = ZL =50 Ω
1 dB gain compression point
OP1dB
–6
IC =15mA
3rd order intercept point
OIP3
–20
IC =15mA


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