STB120NF10 datasheet(1/10 Pages) STMICROELECTRONICS

No de pièce	STB120NF10

Description	N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

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May 2003

STB120NF10

STP120NF10

N-CHANNEL 100V - 0.009

Ω - 120A D²PAK/TO-220

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.009 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

SURFACE-MOUNTING D²PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize the on-resistance. It is therefore suitable as

primary

switch

in

advanced

high-efficiency,

high-

frequency isolated DC-DC converters for Telecom and

Computer applications. It is also intended for any

applications with low gate drive requirements.

APPLICATIONS

s

AUDIO AMPLIFIERS

s

POWER TOOLS

TYPE

VDSS

RDS(on)

ID

STB120NF10

STP120NF10

100 V

< 0.0105

Ω

< 0.0105

Ω

120 A

1

2

3

TO-220

1

3

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD ≤120A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 60A, VDD = 50V

SALES TYPE

MARKING

PACKAGE

PACKAGING

STB120NF10

STP120NF10

B120NF10

P120NF10

TO-263

TO-220

TAPE & REEL

TUBE

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

120

A

ID

Drain Current (continuous) at TC = 100°C

85

A

IDM(•)

Drain Current (pulsed)

480

A

Ptot

Total Dissipation at TC = 25°C

312

W

Derating Factor

2.08

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

10

V/ns

EAS(2)

Single Pulse Avalanche Energy

550

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

Numéro de pièce similaire - STB120NF10

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB120NF10	376Kb / 15P	N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET
STMicroelectronics	STB120NF10	946Kb / 21P	N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET
VBsemi Electronics Co.,...	STB120NF10	969Kb / 7P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STB120NF10T4	946Kb / 21P	N-channel 100 V, 0.009 廓, 110 A STripFET??II Power MOSFET in TO-247, TO-220, D짼PAK, TO-220FP

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