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SI4931DY Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4931DY Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switching Si4931DY Vishay Siliconix New Product Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com 1 Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.018 @ VGS = −4.5 V −8.9 −12 0.022 @ VGS = −2.5 V −8.1 0.028 @ VGS = −1.8 V −3.6 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET Ordering Information: Si4931DY—E3 Si4931DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −12 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID −8.9 −6.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID −7.1 −5.4 A Pulsed Drain Current IDM −30 A continuous Source Current (Diode Conduction)a IS −1.7 −0.9 Maximum Power Dissipationa TA = 25_C PD 2.0 1.1 W Maximum Power Dissipationa TA = 70_C PD 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 46 62.5 Maximum Junction-to-Ambienta Steady State RthJA 80 110 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 24 32 C/W Notes a. Surface Mounted on 1 ” x 1” FR4 Board. |
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