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TPS65983B Fiches technique(PDF) 8 Page - Texas Instruments

No de pièce TPS65983B
Description  USB Type-C and USB PD Controller, Power Switch, and High Speed Multiplexer
Download  117 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPS65983B Fiches technique(HTML) 8 Page - Texas Instruments

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TPS65983B
SLVSDM6A – OCTOBER 2016 – REVISED OCTOBER 2016
www.ti.com
Product Folder Links: TPS65983B
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to network GND. All GND pins must be connected directly to the GND plane of the board.
(3)
The 24 V maximum is based on keeping HV_GATE1/2 at or below 30 V. Fast voltage transitions (<100 ns) may occur up to 30 V.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VI
Input voltage(2)
PP_CABLE, PP_5V0
–0.3
6
V
VIN_3V3
–0.3
3.6
SENSEP, SENSEN(3)
–0.3
24
VDDIO, UART_RX
–0.3
LDO_3V3 + 0.3
VIO
Output voltage (2)
LDO_1V8A, LDO_1V8D, LDO_BMC, SS
–0.3
2
V
LDO_3V3
–0.3
3.45
VOUT_3V3, RESETZ, I2C _IRQ1Z, I2C_IRQ2Z, SPI_MOSI, SPI_CLK, SPI_SSZ,
LSX_P2R, SWD_CLK, UART_TX
–0.3
LDO_3V3 + 0.3
HV_GATE1, HV_GATE2
–0.3
30
HV_GATE1 (relative to SENSEP)
–0.3
6
HV_GATE2 (relative to VBUS)
–0.3
6
VIO
I/O voltage (2)
PP_HV, VBUS (2)
–0.3
24
V
I2C_SDA1, I2C_SCL1, SWD_DATA, SPI_MISO, I2C_SDA2, I2C_SCL2, LSX_R2P,
USB_RP_P, USB_RP_N, AUX_N, AUX_P, DEBUG1, DEBUG2, DEBUG3, DEBUG4,
DEBUG_CTL1, DEBUG_CTL2, GPIOn, MRESET, BUSPOWERZ, GPIO0-8
–0.3
LDO_3V3 + 0.3
R_OSC, I2C_ADDR
–0.3
2
HRESET
-0.3
LDO_1V8D + 0.3
C_USB_TP, C_USB_TN, C_USB_BP, C_USB_BN, C_SBU2, C_SBU1 (Switches
Open)
–2
6
C_USB_TP, C_USB_TN, C_USB_BP, C_USB_BN, C_SBU2, C_SBU1 (Switches
Closed)
–0.3
6
C_CC1, C_CC2, RPD_G1, RPD_G2
–0.3
6
TJ
Operating junction temperature
–10
125
°C
Tstg
Storage temperature
–55
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1500
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500


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