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BTB04-600 Datasheet(Fiches technique) 1 Page - Inchange Semiconductor Company Limited

Numéro de pièce BTB04-600
Description  isc Triacs
Télécharger  1 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BTB04-600 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BTB04-600 Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website: www.iscsemi.com
isc & iscsemi is registered trademark
isc Triacs
BTB04-600
FEATURES
·
With TO-220AB non insulated package
·
Suitables for general purpose applications where gate
high sensitivity is required. Application on 4Q such as
phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
600
V
VRRM
Repetitive peak off-state voltage
600
V
IT(RMS)
RMS on-state current (full sine wave)Tj=95℃
4
A
ITSM
Non-repetitive peak on-state current
tp=10ms
40
A
Tj
Operating junction temperature
110
Tstg
Storage temperature
-40~150
Rth(j-c)
Thermal resistance, junction to case
2.4
/W
Rth(j-a)
Thermal resistance, junction to ambient
60
/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110
0.01
0.75
mA
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110
0.01
0.75
mA
IGT
Gate trigger current
VD=12V; RL= 30Ω
10
mA
10
10
25
IH
Holding current
IGT= 0.1A, Gate Open
25
mA
VGT
Gate trigger voltage all quadrant VD=12V; RL= 30Ω
1.5
V
VTM
On-state voltage
IT= 5.5A ; tp= 380μs
1.65
V


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