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IRLML9303TRPBF Fiches technique(PDF) 2 Page - ZP Semiconductor

No de pièce IRLML9303TRPBF
Description  HEXFETPower MOSFET
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Fabricant  ZPSEMI [ZP Semiconductor]
Site Internet  http://zpsemi.com/
Logo ZPSEMI - ZP Semiconductor

IRLML9303TRPBF Fiches technique(HTML) 2 Page - ZP Semiconductor

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G
D
S
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
-3.7
–––
mV/°C
–––
135
165
–––
220
270
VGS(th)
Gate Threshold Voltage
-1.3
–––
-2.4
V
IDSS
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
RG
Internal Gate Resistance
–––
21
–––
gfs
Forward Transconductance
2.3
–––
–––
S
Qg
Total Gate Charge
–––
2.0
–––
Qgs
Gate-to-Source Charge
–––
0.57
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.2
–––
td(on)
Turn-On Delay Time
–––
7.5
–––
tr
Rise Time
–––14–––
td(off)
Turn-Off Delay Time
–––
9.0
–––
tf
Fall Time
–––
8.6
–––
Ciss
Input Capacitance
–––
160
–––
Coss
Output Capacitance
–––
39
–––
Crss
Reverse Transfer Capacitance
–––
25
–––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
12
18
ns
Qrr
Reverse Recovery Charge
–––
5.3
8.0
nC
–––
–––
–––
–––
pF
A
-1.3
-12
VDD =-15Vd
nA
nC
ns
VDS = VGS, ID = -10μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
RDS(on)
VGS = -4.5V, ID = -1.8A d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
μA
m
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -2.3A d
MOSFET symbol
showing the
VDS =-15V
Conditions
VGS = -4.5V
VGS = 0V
VDS = -25V
ƒ = 1.0KHz
RG = 6.8
VGS = -4.5V d
di/dt = 100A/μs
d
VGS = -20V
VGS = 20V
TJ = 25°C, IS = -1.3A, VGS = 0V d
integral reverse
p-n junction diode.
VDS = -10V, ID =-2.3A
ID = -2.3A
ID = -1.0A
TJ = 25°C, VR = -24V, IF=-1.3A
IRLML9303TRPbF
HEXFET® Power MOSFET
2 of 2
sales@zpsemi.com
www.zpsemi.com


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