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SI1917EDH Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI1917EDH Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si1917EDH Vishay Siliconix New Product www.vishay.com 2 Document Number: 71414 S-03174—Rev. A, 07-Mar-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –100 mA –0.45 V VDS = 0 V, VGS = "4.5 V "1.5 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "10 mA VDS = –9.6 V, VGS = 0 V –1 m Zero Gate Voltage Drain Current IDSS VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5 mA On-State Drain Currenta ID(on) VDS = –5 V, VGS = –4.5 V –2 A VGS = –4.5 V, ID = –1.0 A 0.300 0.370 Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –0.81 A 0.470 0.575 W DS(on) VGS = –1.8 V, ID = –0.2 A 0.660 0.800 Forward Transconductancea gfs VDS = –10 V, ID = –1.0 A 1.7 S Diode Forward Voltagea VSD IS = –0.47 A, VGS = 0 V –0.85 –1.2 V Dynamicb Total Gate Charge Qg 1.3 2.0 Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –1.0 A 0.31 nC Gate-Drain Charge Qgd 0.31 Turn-On Delay Time td(on) 0.17 0.26 Rise Time tr VDD = –6 V, RL = 12 W 0.47 0.71 m Turn-Off Delay Time td(off) VDD = –6 V, RL = 12 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W 0.96 1.4 ms Fall Time tf 1.0 1.5 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.001 100 10,000 Gate Current vs. Gate-Source Voltage 0 2 4 6 8 10 0 4 8 12 16 Gate-Current vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS – Gate-to-Source Voltage (V) 0 3 9 12 15 TJ = 25_C TJ = 150_C 0.01 6 |
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