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2SA1647 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1647 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1647 DESCRIPTION · Available for high-current control in small dimension · Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A · Fast switching speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak NOTE1 -10 A PC Collector Power Dissipation @ TC=25℃ 18 W Collector Power Dissipation @Ta=25℃ NOTE2 1.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤10ms,Duty cycle ≤50% |
Numéro de pièce similaire - 2SA1647 |
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Description similaire - 2SA1647 |
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