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MC100EP210S Fiches technique(PDF) 3 Page - ON Semiconductor |
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MC100EP210S Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 8 page MC100EP210S http://onsemi.com 3 Table 2. ATTRIBUTES Characteristics Value ESD Protection Human Body Model Machine Model Charged Device Model > 2 kV > 100 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb Pkg Pb−Free Pkg LQFP−32 QFN−32 Level 2 Level 2 Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 461 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, refer to Application Note AND8003/D. Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC Power Supply VEE = 0 V 6 V VEE Power Supply (GND) VCC = 2.5 V −6 V VI LVDS, LVPECL Input Voltage VEE = 0 V VI ≤ VCC 6 V Iout Output Current Continuous Surge 50 100 mA mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 32 LQFP 32 LQFP 80 55 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 32 LQFP 12 to 17 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm QFN−32 QFN−32 31 27 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) 2S2P QFN−32 12 °C/W Tsol Wave Solder Pb Pb−Free 265 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
Numéro de pièce similaire - MC100EP210S_11 |
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Description similaire - MC100EP210S_11 |
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