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MC10H105PG Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MC10H105PG
Description  Triple 2?????륤nput OR/NOR Gate
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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MC10H105PG Fiches technique(HTML) 2 Page - ON Semiconductor

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MC10H105
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2
Table 1. MAXIMUM RATINGS
Symbol
Characteristic
Rating
Unit
VEE
Power Supply (VCC = 0)
−8.0 to 0
Vdc
VI
Input Voltage (VCC = 0)
0 to VEE
Vdc
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
0 to +75
°C
Tstg
Storage Temperature Range
Plastic
Ceramic
−55 to +150
−55 to +165
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. ELECTRICAL CHARACTERISTICS (VEE = −5.2 V ±5%) (Note 1)
25°
75°
Symbol
Characteristic
Min
Max
Min
Max
Min
Max
Unit
IE
Power Supply Current
23
21
23
mA
IinH
Input Current High
425
265
265
mA
IinL
Input Current Low
0.5
0.5
0.3
mA
VOH
High Output Voltage
−1.02
−0.84
−0.98
−0.81
−0.92
−0.735
Vdc
VOL
Low Output Voltage
−1.95
−1.63
−1.95
−1.63
−1.95
−1.60
Vdc
VIH
High Input Voltage
−1.17
−0.84
−1.13
−0.81
−1.07
−0.735
Vdc
VIL
Low Input Voltage
−1.95
−1.48
−1.95
−1.48
−1.95
−1.45
Vdc
1. Each MECL 10H series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been
established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 linear fpm is
maintained. Outputs are terminated through a 50 W resistor to −2.0 V.


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