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ADR520 Fiches technique(PDF) 4 Page - Analog Devices

No de pièce ADR520
Description  High Precision Shunt Mode Voltage References
Download  16 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
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ADR520 Fiches technique(HTML) 4 Page - Analog Devices

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ADR520/ADR525/ADR530/ADR540/ADR550
Rev. A | Page 4 of 16
Table 4. ADR530 Electrical Characteristics @ IIN = 50 µA to 10 mA, TA = 25°C, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Grade A
Grade B
VO
2.988
2.994
3.000
3.000
3.012
3.006
V
V
Initial Accuracy
VOERR
Grade A
±0.4%
–12
+12
mV
Grade B
±0.2%
–6
+6
mV
Temperature Coefficient1
TCVO
–40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 10 mA
–40°C < TA < +85°C
IIN = 1 mA to 10 mA
–40°C < TA < +85°C
1
4
2
mV
mV
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to 10 mA
0.2
Minimum Operating Current
IIN
–40°C < TA < +85°C
50
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
16
µV p-p
Turn-On Settling Time
tR
2
µs
Output Voltage Hysteresis
∆VO_HYS
IIN = 1 mA
40
ppm
1Guaranteed by design
Table 5. ADR540 Electrical Characteristics @ IIN = 50 µA to 10 mA, TA = 25°C, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Grade A
Grade B
VO
4.08
4.088
4.096
4.096
4.112
4.104
V
V
Initial Accuracy
VOERR
Grade A
±0.4%
–16
+16
mV
Grade B
±0.2%
–8
+8
mV
Temperature Coefficient1
TCVO
–40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 10 mA
–40°C < TA < +85°C
IIN = 1 mA to 10 mA
–40°C < TA < +85°C
1
5
2
mV
mV
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to 10 mA
0.2
Minimum Operating Current
IIN
–40°C < TA < +85°C
50
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
18
µV p-p
Turn-On Settling Time
tR
2
µs
Output Voltage Hysteresis
∆VO_HYS
IIN = 1 mA
40
ppm
1Guaranteed by design


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