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ADR520 Fiches technique(PDF) 3 Page - Analog Devices

No de pièce ADR520
Description  High Precision Shunt Mode Voltage References
Download  16 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

ADR520 Fiches technique(HTML) 3 Page - Analog Devices

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ADR520/ADR525/ADR530/ADR540/ADR550
Rev. A | Page 3 of 16
SPECIFICATIONS
Table 2. ADR520 Electrical Characteristics @ IIN = 50 µA to 10 mA, TA = 25°C, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Grade A
Grade B
VO
2.040
2.044
2.048
2.048
2.056
2.052
V
V
Initial Accuracy
VOERR
Grade A
±0.4%
–8
+8
mV
Grade B
±0.2%
–4
+4
mV
Temperature Coefficient1
TCVO
–40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 10 mA
–40°C < TA < +85°C
IIN = 1 mA to 10 mA
–40°C < TA < +85°C
1
4
2
mV
mV
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to10 mA
0.27
Minimum Operating Current
IIN
–40°C < TA < +85°C
50
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
14
µV p-p
Turn-On Settling Time
tR
2
µs
Output Voltage Hysteresis
∆VO_HYS
IIN = 1 mA
40
ppm
1Guaranteed by design
Table 3. ADR525 Electrical Characteristics @ IIN = 50 µA to 10 mA, TA = 25°C, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
Grade A
Grade B
VO
2.490
2.495
2.500
2.500
2.510
2.505
V
V
Initial Accuracy
VOERR
Grade A
±0.4%
–10
+10
mV
Grade B
±0.2%
–5
+5
mV
Temperature Coefficient1
TCVO
–40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 10 mA
–40°C < TA < +85°C
IIN = 1 mA to 10 mA
–40°C < TA < +85°C
1
4
2
mV
mV
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to 10 mA
0.2
Minimum Operating Current
IIN
–40°C < TA < +85°C
50
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
14
µV p-p
Turn-On Settling Time
tR
2
µs
Output Voltage Hysteresis
∆VO_HYS
IIN = 1 mA
40
ppm
1 Guaranteed by design


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