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KTB2510 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce KTB2510
Description  isc Silicon PNP Darlington Power Transistor
Télécharger  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KTB2510 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  KTB2510 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited KTB2510 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Darlington Power Transistor
KTB2510
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA ; IB= 0
-150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -7A; IB= -7mA
-2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -7A; IB= -7mA
-3
V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-2
mA
hFE
DC Current Gain
IC= -7A ; VCE= -4V
5000
fT
Current-Gain—Bandwidth Product
IC= -2A; VCE= -12V
50
MHz
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1MHz
230
pF


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