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KTB1366 Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce KTB1366
Description  isc Silicon PNP Power Transistor
Télécharger  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KTB1366 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  KTB1366 Datenblatt HTML 1Page - Inchange Semiconductor Company Limited KTB1366 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
KTB1366
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-60
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
-1.0
V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-100
μ
A
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
60
200
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
20
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
150
pF
fT
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -5V
9
MHz
Switching Times
ton
Turn-on Time
VCC= -30V, RL= 15Ω,
IB1= -IB2= -0.2A,
0.4
μ
s
tstg
Storage Time
1.7
μ
s
tf
Fall Time
0.5
μ
s
hFE-1 Classifications
O
Y
60-120
100-200


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