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SI1013X Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI1013X
Description  P-Channel 1.8-V (G-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1013X Fiches technique(HTML) 2 Page - Vishay Siliconix

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Si1013R/X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71167
S-02464—Rev. A, 25-Oct-00
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "4.5 V
"1
"2
mA
VDS = –16 V, VGS = 0 V
–0.3
–100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V, TJ = 85_C
–5
mA
On-State Drain Currenta
ID(on)
VDS = –5 V, VGS = –4.5 V
–700
mA
VGS = –4.5 V, ID = –350 mA
0.8
1.2
Drain-Source On-State Resistancea
rDS(on)
VGS = –2.5 V, ID = –300 m A
1.2
1.6
W
DS(on)
VGS = –1.8 V, ID = –150 m A
1.8
2.7
Forward Transconductancea
gfs
VDS = –10 V, ID = –250 mA
0.4
S
Diode Forward Voltagea
VSD
IS = –150 mA, VGS = 0 V
–0.8
–1.2
V
Dynamicb
Total Gate Charge
Qg
1500
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –4.5 V, ID = –250 mA
150
pC
Gate-Drain Charge
Qgd
450
Turn-On Delay Time
td(on)
5
Rise Time
tr
VDD = –10 V, RL = 47 W
9
Turn-Off Delay Time
td(off)
VDD = –10 V, RL = 47 W
ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W
35
ns
Fall Time
tf
11
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
0
200
400
600
800
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 5 thru 3 V
TJ = –55_C
125
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
1.8 V
2.5 V


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