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MPS6515 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce MPS6515
Description  NPN General Purpose Amplifier
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

MPS6515 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A. February 2003
Absolute Maximum Ratings* T
C=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6”
× 0.06"
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector current
- Continuous
200
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 0.5mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC =10µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10µA, IC = 0
4.0
V
ICBO
Collector Cutoff Current
VCE = 30V, IE = 0
50
nA
ICBO
Collector Cutoff Current
VCB = 30V, IE = 0, T = 60°C1.0
µA
On Characteristics *
hFE
DC Current Gain
IC = 2.0mA, VCE = 10V
IC = 100mA, VCE = 10V
250
150
500
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 5.0mA
0.5
V
Small Signal Characteristics
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 100kHz
3.5
pF
Symbol
Parameter
Max.
Units
MPS6515
*MMBT6515
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
MPS6515/MMBT6515
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 3J
TO-92
1
1. Emitter 2. Base 3. Collector


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