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AS4C16M16D1A Fiches technique(PDF) 59 Page - Alliance Semiconductor Corporation

No de pièce AS4C16M16D1A
Description  66-pin TSOPII PACKAGE
Download  64 Pages
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Fabricant  ALSC [Alliance Semiconductor Corporation]
Site Internet  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C16M16D1A Fiches technique(HTML) 59 Page - Alliance Semiconductor Corporation

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Figure 39. Write without Auto Precharge
CK
CK
A0-A8
NOP
COMMAND
tIS tIH
NOP
NOP
NOP
VALID
tIS tIH
tCH tCL
tCK
RA
CKE
A10
BA0,BA1
DQS
NOP
WRITE
RA
tIH
tIS
DQ
tDSH
PRE
NOP
NOP
ACT
Col n
tIS tIH
RA
ALL BANKS
ONE BANKS
Bank X
tIS tIH
DIS AP
*Bank X
BA
tWPRES
Case 1:
tDQSS=min
DI
n
tIH
tDQSS
tDSH
tDQSH
tDQSL
tWPST
tWPRE
DM
DQS
DQ
tDSS
tWPRES
Case 2:
tDQSS=max
DI
n
tDQSS
tDSS
DM
tWR
tRP
tDQSH
tWPST
tDQSL
tWPRE
Don’t Care
DI n = Data In from column n
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH
Burst Length = 4 in the case shown
3 subsequent elements of Data In are provided in the programmed order following DI n
DIS AP = Disable Autoprecharge
*=
Don't Care
, if A10 is HIGH at this point
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the +
25% window of the corresponding positive clock edge
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks
A9,A11,A12
 
 
 
 
16Mx16 DDR1-AS4C16M16D1A
Confidential
- 59/64 -
Rev.1.1
July 2015


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