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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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L6207D Fiches technique(PDF) 8 Page - STMicroelectronics |
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L6207D Fiches technique(HTML) 8 Page - STMicroelectronics |
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8 / 23 page  L6207 8/23 CIRCUIT DESCRIPTION POWER STAGES and CHARGE PUMP The L6207 integrates two independent Power MOS Full Bridges. Each Power MOS has an Rdson = 0.3ohm (typical value @ 25°C), with intrinsic fast freewheeling diode. Cross conduction protection is achieved using a dead time (td = 1 µs typical) be- tween the switch off and switch on of two Power MOS in one leg of a bridge. Using N Channel Power MOS for the upper transis- tors in the bridge requires a gate drive voltage above the power supply voltage. The Bootstrapped (VBOOT) supply is obtained through an internal Os- cillator and few external components to realize a charge pump circuit as shown in Figure 3. The oscil- lator output (VCP) is a square wave at 600kHz (typi- cal) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table1. Table 1. Charge Pump External Components Values Figure 3. Charge Pump Circuit LOGIC INPUTS Pins IN1A, IN2B, IN1B and IN2B are TTL/CMOS and uC compatible logic inputs. The internal structure is shown in Fig. 4. Typical value for turn-on and turn-off thresholds are respectively Vthon = 1.8V and Vthoff = 1.3V. Pins ENA and ENB have identical input structure with the exception that the drains of the Overcurrent and thermal protection MOSFETs (one for the Bridge A and one for the Bridge B) are also connected to these pins. Due to these connections some care needs to be taken in driving these pins. The ENA and ENB in- puts may be driven in one of two configurations as shown in figures 5 or 6. If driven by an open drain (collector) structure, a pull-up resistor REN and a ca- pacitor CEN are connected as shown in Fig. 5. If the driver is a standard Push-Pull structure the resistor REN and the capacitor CEN are connected as shown in Fig. 6. The resistor REN should be chosen in the range from 2.2k Ω to 180KΩ. Recommended values for REN and CEN are respectively 100K Ω and 5.6nF. More information on selecting the values is found in the Overcurrent Protection section. Figure 4. Logic Inputs Internal Structure Figure 5. ENA and ENB Pins Open Collector Driving Figure 6. ENA and ENB Pins Push-Pull Driving CBOOT 220nF CP 10nF RP 100 Ω D1 1N4148 D2 1N4148 D2 CBOOT D1 RP CP VS VSA VCP VBOOT VSB D01IN1328 5V D01IN1329 ESD PROTECTION 5V 5V OPEN COLLECTOR OUTPUT REN CEN ENA or ENB D02IN1349 5V PUSH-PULL OUTPUT REN CEN ENA or ENB D02IN1350 |
Numéro de pièce similaire - L6207D |
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Description similaire - L6207D |
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