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FDD6670AL Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FDD6670AL Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDD6670AL Rev C (W) Typical Characteristics 0 20 40 60 80 100 00.5 1 1.5 22.5 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V 4.5V VGS = 10V 4.0V 3.5V 0.8 1 1.2 1.4 1.6 1.8 0 20406080 100 ID, DRAIN CURRENT (A) VGS = 3.5V 6.0V 10V 5.0V 4.5V 4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID =18A VGS = 10V 0.002 0.004 0.006 0.008 0.01 0.012 24 68 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 9 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 20 40 60 80 1.522.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC VDS = 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature |
Numéro de pièce similaire - FDD6670AL |
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Description similaire - FDD6670AL |
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