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TPS73725DCQG4 Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS73725DCQG4 Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 38 page TPS737 SBVS067Q – JANUARY 2006 – REVISED MAY 2015 www.ti.com 6.4 Thermal Information TPS737xx(2) DRB [VSON] DCQ DRV THERMAL METRIC(1) UNIT [SOT-223] [WSON](3) 8 PINS 6 PINS 6 PINS RθJA Junction-to-ambient thermal resistance(4) 49.5 53.1 67.2 RθJC(top) Junction-to-case (top) thermal resistance(5) 58.9 35.2 87.6 RθJB Junction-to-board thermal resistance(6) 25.1 7.8 36.8 °C/W ψJT Junction-to-top characterization parameter(7) 1.7 2.9 1.8 ψJB Junction-to-board characterization parameter(8) 25.2 7.7 37.2 RθJC(bot) Junction-to-case (bottom) thermal resistance(9) 8.6 N/A 7.7 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) Thermal data for the DRB, DCQ, and DRV packages are derived by thermal simulations based on JEDEC-standard methodology as specified in the JESD51 series. The following assumptions are used in the simulations: (a) i. DRB: The exposed pad is connected to the PCB ground layer through a 2 × 2 thermal via array. . ii. DCQ: The exposed pad is connected to the PCB ground layer through a 3 × 2 thermal via array. . iii. DRV: The exposed pad is connected to the PCB ground layer through a 2 × 2 thermal via array. Due to size limitation of thermal pad, 0.8-mm pitch array is used which is off the JEDEC standard. (b) The top copper layer has a detailed copper trace pattern. The bottom copper layer is assumed to have a 20% thermal conductivity of copper, representing a 20% copper coverage. (c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3-inch × 3-inch copper area. To understand the effects of the copper area on thermal performance, see the Power Dissipation and Estimating Junction Temperature sections of this data sheet. (3) Power dissipation may limit operating range. (4) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (5) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (6) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (7) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7). (8) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7). (9) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. 6 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: TPS737 |
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