2SD1707 datasheet(1/4 Pages) PANASONIC

No de pièce	2SD1707

Description	Silicon NPN epitaxial planar type

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Fabricant	PANASONIC [Panasonic Semiconductor]

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Power Transistors

1

Publication date: September 2003

SJD00211BED

2SD1707

Silicon NPN epitaxial planar type

For power switching

Complementary to 2SB1156

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Satisfactory linearity of forward current transfer ratio h

FE

• Large collector current I

C

• Full-pack package which can be installed to the heat sink with one

screw

■ Absolute Maximum Ratings T

C = 25°C

■ Electrical Characteristics T

C = 25°C ± 3°C

15.0±0.3

5.0±0.2

11.0±0.2

2.0±0.2

2.0±0.1

0.6±0.2

1.1±0.1

5.45±0.3

10.9±0.5

123

φ 3.2±0.1

(3.2)

Unit: mm

1: Base

2: Collector

3: Emitter

EIAJ: SC-92

TOP-3F-A1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

130

V

Collector-emitter voltage (Base open)

VCEO

80

V

Emitter-base voltage (Collector open)

VEBO

7V

Collector current

IC

20

A

Peak collector current

ICP

30

A

Collector power dissipation

PC

100

W

Ta = 25°C

3.0

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = 10 mA, IB = 080

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 100 V, IE = 010

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= 5 V, I

C

= 050

µA

Forward current transfer ratio

hFE1

VCE = 2 V, IC = 0.1 A

45



hFE2 *

VCE = 2 V, IC = 3 A

90

260

hFE3

VCE

= 2 V, I

C

= 10 A

30

Collector-emitter saturation voltage

VCE(sat)1

IC = 8 A, IB = 0.4 A

0.5

V

VCE(sat)2

IC = 20 A, IB = 2 A

1.5

Base-emitter saturation voltage

VBE(sat)1

IC

= 8 A, I

B

= 0.4 A

1.5

V

VBE(sat)2

IC = 20 A, IB = 2 A

2.5

Transition frequency

fT

VCE = 10 V, IC = 0.5 A, f = 1 MHz

20

MHz

Turn-on time

ton

IC = 8 A, IB1 = 0.8 A, IB2 = − 0.8 A

0.5

µs

Storage time

tstg

VCC = 50 V

2.0

µs

Fall time

tf

0.2

µs

Rank

Q

P

hFE2

90 to 180

130 to 260

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