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SS1FL3 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SS1FL3 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 6 page SS1FL3 www.vishay.com Vishay General Semiconductor Revision: 01-Sep-16 3 Document Number: 87614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig. 1 - Typical Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 255075 100 125 150 Mount Temperature ( °C) Mounted on recommended areas, FR4 PCB; typical values R thJM = 22 °C/W R thJA = 125 °C/W 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 1.0 D = 0.8 D = tp/T T tp 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) T A = 25 °C T A = 125 °C T A = 150 °C T A = 100 °C 1 10 100 1000 10 000 100 000 10 15 20 25 30 Percent of Rated Peak Reverse Voltage (V) T A = 100 °C T A = 150 °C T A = 125 °C T A = 25 °C 10 100 1000 0 5 10 15 20 25 30 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 1 10 100 1000 0.001 0.1 10 1000 t - Pulse Duration (s) Junction to Ambient Mounted on standard footprint ,FR4 PCB |
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