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TA48018F Fiches technique(PDF) 6 Page - Toshiba Semiconductor

No de pièce TA48018F
Description  1.8 V, 2 V, 2.5 V, 3 V, 3.3 V, 5 V Three-Terminal Low Dropout Voltage Regulator with Output Current of 1 A
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA48018F Fiches technique(HTML) 6 Page - Toshiba Semiconductor

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TA48018,02,025,03,033,05F/S
2004-07-01
6
TA4805F/S
Electrical Characteristics
(Unless otherwise specified, CIN = 0.33 µF, COUT = 10 µF, Tj = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
VIN = 7 V, IOUT = 0.5 A
4.85
5.0
5.15
Output voltage
VOUT
6.0 V <= VIN <= 12 V, 5 mA <= IOUT <= 1 A,
0°C <= Tj <= 125°C
4.775
5.0
5.225
V
Line regulation
Reg・line
6.0 V <= VIN <= 12 V, IOUT = 0.5 A
5
20
mV
Load regulation
Reg・load
VIN = 7.0 V, 5 mA <= IOUT <= 1 A
5
20
mV
6.0 V <= VIN <= 12 V, IOUT = 0 A
0.8
1.8
Quiescent current
IB
6.0 V <= VIN <= 12 V, IOUT = 1 A
10
20
mA
VIN = 2.1 V, IOUT = 0 A
1.3
5
Starting quiescent current
IBstart
VIN = 3.0 V, IOUT = 1 A
14
30
mA
Output noise voltage
VNO
VIN = 7.0 V, IOUT = 50 mA
10 Hz <= f <= 100 kHz
150
µVrms
Ripple rejection
R.R.
6.0 V <= VIN ≤ 12 V, IOUT = 50 mA
f = 120 Hz
50
64
dB
IOUT = 0.5 A
0.3
0.5
Dropout voltage
VD
IOUT = 1 A
0.4
V
Average temperature coefficient of
output voltage
TCVO
VIN = 7.0 V, IOUT = 5 mA,
0°C <= Tj <= 125°C
0.45
mV/°C
Electrical Characteristics for All Products
Generally, the characteristics of power supply ICs change according to temperature fluctuations.
The specification Tj = 25℃ is based on a state where temperature increase has no effect (assuming no fluctuation
in the characteristics) as ascertained by pulse tests.
Standard Application Circuit
Be sure to connect a capacitor near the input terminal and output terminal between both terminals and GND.
The capacitances should be determined experimentally. In particular, adequate investigation should be made so
that there is no problem even in high or low temperature.
1
2
VIN
TA48xxF/S
3
VOUT
COUT
CIN
0.33
µF
33
µF


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