SI2305 datasheet(1/3 Pages) HOTTECH

No de pièce	SI2305

Description	P-Channel MOSFET

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Fabricant	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Site Internet	http://www.hottech.net.cn/

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Page:P3-P1

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

High dense cell design for extremely low RDS(ON)

Rugged and reliable

Case Material: Molded

P lastic.

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-30

V

Gate-source Voltage

VGS

12

V

Drain Current (Continuous)

ID

-3.2

A

Drain Current (Pulsed)

IDM

-10

A

Total Power Dissipation @TA=25oC

PD

1.38

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 to +150

°C

Thermal Resistance Junction to Ambient (PCB mounted)

RθJA

90

°C/W

Electrical Characteristics (TA=25°C, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

-

V

ΔBVDSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25

, ID=-1mA

-

-0.1

-

V/

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-3.2A

-

60

mΩ

VGS=-4.5V, ID=-3.0A

-

80

mΩ

VGS=-2.5V, ID=-2.0A

-

150

mΩ

VGS=-1.8V, ID=-1.0A

-

250

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-0.5

-

-1.2

V

gfs

Forward Transconductance

VDS=-5V, ID=-3.0A

-

9

-

S

IDSS

Drain-Source Leakage Current (Tj=25 )

VDS=-30V, VGS=0V

-

-1

uA

Drain-Source Leakage Current (Tj=70 )

VDS=-24V, VGS=0V

-

-25

uA

IGSS

Gate-Source Leakage

VGS= ± 12V

-

±100

nA

Qg

Total Gate Charge

ID=-3.2A

VDS=-24V

VGS=-4.5V

-

10

18

nC

Qgs

Gate-Source Charge

-

1.8

-

nC

Qgd

Gate-Drain ("Miller") Charge

-

3.6

-

nC

td(on)

Turn-on Delay Time

VDS=-15V

ID=-3.2A

RG=3.3Ω,VGS=-10V

RD=4.6Ω

-

7

-

ns

tr

Rise Time

-

15

-

ns

td(off)

Turn-off Delay Time

-

21

-

ns

tf

Fall Time

-

15

-

ns

Ciss

Input Capacitance

VGS=0V VDS=-25V f=1.0MHz

-

735

1325

pF

Coss

Output Capacitance

-

100

-

pF

Crss

Reverse Transfer Capacitance

-

80

-

pF

P-Channel MOSFET

a

b

SOT-23

1.Gate

2.Source

3.Drain

G

D

S

SI2305

Absolute Maximum Ratings (TA=25

oC, unless otherwise noted)

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