2SA1615 datasheet(2/2 Pages) ISC

No de pièce	2SA1615

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

2

isc Silicon PNP Power Transistor

2SA1615

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)NOTE

Collector-Emitter Saturation Voltage

IC= -4A; IB= -50mA

-0.25

V

VBE(sat)NOTE

Base-Emitter Saturation Voltage

IC= -4A; IB= -50mA

-1.2

V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

-1.0

μ

A

IEBO

Emitter Cutoff Current

VEB= -8V; IC= 0

-1.0

μ

A

hFE-1NOTE

DC Current Gain

IC= -0.5A; VCE= -2V

200

600

hFE-2NOTE

DC Current Gain

IC= -4A; VCE= -2V

160

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

220

pF

fT

Current-Gain—Bandwidth Product

IC= -1.5A; VCE= -5V

180

MHz

NOTE:Pulse test PW≤350us,duty cycle ≤2%



hFE-1 Classifications

L

K

200-400

300-600

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