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2N3741R Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3741R Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistors 2N3741R DESCRIPTION · DC Current Gain- : hFE= 30-100@IC= -250mA · Wide Area of Safe Operation · Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A · High Gain · Low Saturation Voltage APPLICATIONS · Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -10 A IB Base Current -2 A PC Collector Power Dissipation@TC=25℃ 25 W Tstg Storage Temperature -65~200 ℃ |
Numéro de pièce similaire - 2N3741R |
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Description similaire - 2N3741R |
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