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2N3741R Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2N3741R
Description  isc Silicon PNP Power Transistors
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3741R Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistors
2N3741R
DESCRIPTION
·
DC Current Gain-
: hFE= 30-100@IC= -250mA
·
Wide Area of Safe Operation
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6 V(Max)@ IC = -1A
·
High Gain
·
Low Saturation Voltage
APPLICATIONS
·
Designed for use as drivers, switches and medium-power
amplifier and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7.0
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
-2
A
PC
Collector Power Dissipation@TC=25℃
25
W
Tstg
Storage Temperature
-65~200
℃


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