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LMH6533 Datasheet(Fiches technique) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Numéro de pièce LMH6533
Description  Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator
Télécharger  11 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6533 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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+5V DC Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T
J = 25˚C, RL =10
Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
I
Swr
Supply Current, Write Mode
EN2 = EN3 = EN4 = High; (Note 12)
I2=I3=I4=I
R = 125 µA
182.5
210
mA
I
S
Supply Current
All Channels Disable, No Input
Current. SELB = 0; R
AA,RAB,RFA,
R
FB =
45
mA
+5V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J = 25˚C, RL =10
Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
t
r
Write Rise Time
I
OUT = 40 mA (Read) + 40 mA (10%
to 90%) R
LOAD =5
0.50
ns
t
f
Write Fall Time
I
OUT = 40 mA (Read) + 40 mA (90%
to 10%) R
LOAD =5
0.76
ns
t
r
Write Rise Time
I
OUT = 100 mA (Read) + 100 mA
(10% to 90%) R
LOAD =5
0.65
ns
t
f
Write Fall Time
I
OUT = 100 mA (Read) + 100 mA
(90% to 10%) R
LOAD =5
0.75
ns
t
r
Write Rise Time
I
OUT = 150 mA (Read) + 150 mA
(10% to 90%) R
LOAD =5
0.78
ns
t
f
Write Fall Time
I
OUT = 150 mA (Read) + 150 mA
(90% to 10%) R
LOAD =5
0.77
ns
OS
Output Current Overshoot
I
OUT = 40 mA (Read) + 40 mA
16
%
IN
0
Output Current Noise
I
OUT = 40 mA; RLOAD =50
Ω;
f = 10 MHz; ENOSC = Low
0.47
nA/
t
ON
I
OUT ON Prop. Delay
Switched on EN2 and EN2B
0.45
ns
t
OFF
I
OUT OFF Prop. Delay
Switched on EN2 and EN2B
0.40
ns
t
disr
Disable Time, Read Channel
Switch on ENR
1.1
ns
t
enr
Enable Time, Read Channel
Switch on ENR
1.1
ns
t
dis
Disable Time, (Shutdown)
3
µs
t
en
Enable Time, (Shutdown)
3
µs
BW
C
Channel Bandwidth, –3 dB
I
OUT = 50 mA, All Channels
2.5
MHz
f
OSC
Oscillator Frequency
R
F =3k
Range 200 MHz to 600 MHz
270
330
390
MHz
T
DO
Disable Time Oscillator
5.2
ns
T
EO
Enable Time Oscillator
5.4
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: For testing purposes, ESD was applied using ‘Human body model’; 1.5 k
Ω in series with 100 pF
Note 3: Machine Model, 0
Ω in series with 200 pF.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C
Note 5: The maximum power dissipation is a function of TJ(MAX, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) -TA)/θJA. All numbers apply for packages soldered directly onto a PC board.
Note 6: Typical values represent the most likely parametric norm.
Note 7: All limits are guaranteed by testing or statistical analysis.
Note 8: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ =TA. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where
TJ > TA. See Applications section for information on temperature de-rating of this device.
Note 9: VGPD = ground potential difference voltage between driver and receiver
www.national.com
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