K6F3216T6M datasheet(6/9 Pages) SAMSUNG

No de pièce	K6F3216T6M

Description	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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K6F3216T6M Family

Revision 1.0

November 2002

6

CMOS SRAM

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS1

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

CS2

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Samsung semiconductor	K6F3216U6M	150Kb / 9P	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F3216U6M-F	150Kb / 9P	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Description similaire - K6F3216T6M

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	K6F3216U6M	150Kb / 9P	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F1616T6B	199Kb / 10P	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM621FU16	72Kb / 11P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F8016V3A	146Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F4016R4E	119Kb / 9P	256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	DS_K6F8016U6B	157Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	DS_K6F2016U4E	158Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM620FU16	74Kb / 11P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung semiconductor	K6F2016U4D	117Kb / 9P	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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K6F3216T6M Fiches technique(PDF) 6 Page - Samsung semiconductor

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