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FQPF2N60C Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce FQPF2N60C
Description  600V N-Channel MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF2N60C Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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Rev. A, September 2003
©2003 Fairchild Semiconductor Corporation
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※Notes:
1. V
GS = 0 V
2. I
D = 250
μ A
T
J, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※Notes:
1. V
GS = 10 V
2. I
D = 2.5 A
T
J, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
2.4
T
C
, Case Temperature [℃]
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP2N60C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF2N60C


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