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AM7540C Fiches technique(PDF) 1 Page - Analog Power |
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AM7540C Fiches technique(HTML) 1 Page - Analog Power |
1 / 3 page AM7540C Analog Power PRELIMINARY Publication Order Number: DS-AM7540_A 1 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. P & N-Channel 40-V (D-S) MOSFET • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DFN5x6 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 40 -40 VGS 20 -20 TA=25 o C 8.1 -7.8 TA=70 o C 6.6 -6.4 IDM ±20 ±20 IS 2.9 -2.9 A TA=25 o C 3.5 3.5 TA=70 o C 2.2 2.2 TJ, Tstg -55 to 150 -55 to 150 o C Drain-Source Voltage Continuous Drain Current a ID A Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage VDS (V) rDS(on) m( ) ID (A) 46 @ VGS = 4.5V 7.2 36 @ VGS = 10V 8.1 55 @ VGS = -4.5V -6.6 39 @ VGS = -10V -7.8 40 PRODUCT SUMMARY -40 Symbol Maximum Units t <= 10 sec 35 o C/W Steady State 85 o C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a RθJA S 2 D2 G 2 P-Channel MOSFET D1 S 1 G 1 N-Channel MOSFET S1 G1 S2 G2 1 2 3 4 SOIC-8PP Top View D1 D1 D2 D2 8 7 6 5 |
Numéro de pièce similaire - AM7540C |
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Description similaire - AM7540C |
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