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AM10P10-530I Fiches technique(PDF) 1 Page - Analog Power

No de pièce AM10P10-530I
Description  P-Channel 100-V (D-S) MOSFET
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Fabricant  ANALOGPOWER [Analog Power]
Site Internet  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM10P10-530I Fiches technique(HTML) 1 Page - Analog Power

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Analog Power
AM10P10-530I
P-Channel 100-V (D-S) MOSFET
VDS (V)
ID (A)
-7.9
-6.8
Symbol
Limit
Units
VDS
-100
VGS
±20
Continuous Drain Current
a
TC=25°C
ID
-8
IDM
-32
TC=25°C
IS
-8
A
Power Dissipation
a
TC=25°C
PD
50
W
TJ, Tstg
-55 to 175
°C
Symbol
Maximum
Units
RθJA
40
RθJC
3
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
c.
Surface Mounted on 1” x 1” FR4 Board.
Pulsed Drain Current
b
THERMAL RESISTANCE RATINGS
°C/W
Parameter
Operating Junction and Storage Temperature Range
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
V
Parameter
Drain-Source Voltage
Gate-Source Voltage
PRODUCT SUMMARY
-100
rDS(on) (mΩ)
530 @ VGS = -10V
720 @ VGS = -4.5V
A
Maximum Junction-to-Ambient
c
Maximum Junction-to-Case
Continuous Source Current (Diode Conduction)
a
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
TO-251
© Preliminary
1
Publication Order Number:
DS_AM10P10-530I_1A


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