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STQ1HNK60R Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ1HNK60R
Description  N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
Download  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1HNK60R Fiches technique(HTML) 2 Page - STMicroelectronics

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STD1NK60 - STD1NK60-1 - STQ1HNK60R
2/13
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
STD1NK60
STD1NK60-1
STQ1HNK60R
VDS
Drain-source Voltage (VGS =0)
600
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
1.0
0.4
A
ID
Drain Current (continuous) at TC = 100°C
0.63
0.25
A
IDM ( )
Drain Current (pulsed)
4
1.6
A
PTOT
Total Dissipation at TC = 25°C
30
3
W
Derating Factor
0.24
0.025
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
DPAK / IPAK
TO-92
Rthj-case
Thermal Resistance Junction-case Max
4.16
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
40
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
275
260
°C
Symbol
Parameter
Max Value
Unit
DPAK / IPAK
TO-92
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =50 V)
25
mJ


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