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SI1031X Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI1031X Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si1031R/X Vishay Siliconix New Product Document Number: 71171 S-31507—Rev. B, 14-Jul-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 0 200 400 600 800 1000 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 150 mA ID - Drain Current (mA) VGS = 4.5 V ID = 150 mA VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) 0 10 20 30 40 50 0123456 ID = 150 mA 1000 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V ID = 125 mA VGS = 2.5 V VGS = 1.8 V ID = 125 mA TJ = 125_C TJ = 25_C TJ = -55_C 10 100 VGS = 0 V f = 1 MHz |
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