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TPS62743 Fiches technique(PDF) 5 Page - Texas Instruments

No de pièce TPS62743
Description  300/400 mA High Efficiency Buck Converter with Ultra-low Quiescent Current
Download  25 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPS62743 Fiches technique(HTML) 5 Page - Texas Instruments

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TPS62743, TPS627431
www.ti.com
SLVSCQ0A – JUNE 2015 – REVISED MAY 2016
Product Folder Links: TPS62743 TPS627431
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Copyright © 2015–2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
8.4 Thermal Information
THERMAL METRIC(1)
TPS62743
UNIT
YFP
8 PINS
RθJA
Junction-to-ambient thermal resistance
103
°C/W
RθJCtop
Junction-to-case (top) thermal resistance
1.0
°C/W
RθJB
Junction-to-board thermal resistance
20
°C/W
ψJT
Junction-to-top characterization parameter
0.3
°C/W
ψJB
Junction-to-board characterization parameter
20
°C/W
RθJCbot
Junction-to-case (bottom) thermal resistance
N/A
°C/W
8.5 Electrical Characteristics
VIN = 3.6V, TA = –40°C to 85°C typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ
Operating
quiescent current
EN = VIN, IOUT = 0µA, VOUT = 1.8V, device not switching
360
1800
nA
EN = VIN, IOUT = 0mA, VOUT = 1.8V , device switching
460
ISD
Shutdown current
EN = GND, shutdown current into VIN
70
1000
nA
VTH_ UVLO+
Undervoltage
lockout threshold
Rising VIN
2.075
2.15
V
VTH_UVLO-
Falling VIN
1.925
2
INPUTS (EN, VSEL1-3 )
VIH TH
High level input
threshold
2.2V
≤ VIN ≤ 5.5V
1.1
V
VIL TH
Low level input
threshold
2.2V
≤ VIN ≤ 5.5V
0.4
V
IIN
Input bias Current
10
25
nA
POWER SWITCHES
RDS(ON)
High side
MOSFET on-
resistance
IOUT = 50mA
0.45
1.12
Low Side
MOSFET on-
resistance
0.22
0.65
ILIMF
High side
MOSFET switch
current limit
TPS62743 3.0V
≤ VIN ≤ 5.5V
480
600
720
mA
TPS627431 3.0V
≤ VIN ≤ 5.5V
590
650
800
Low side MOSFET
switch current limit
TPS62743
600
TPS627431
650
OUTPUT VOLTAGE DISCHARGE
RDSCH_VOS
MOSFET on-
resistance
EN = GND, IVOS = -10mA into VOS pin
30
65
IIN_VOS
Bias current into
VOS pin
EN = VIN, VOUT = 2V
40
1010
nA


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