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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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TPS57160QDGQRQ1 Fiches technique(PDF) 5 Page - Texas Instruments |
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TPS57160QDGQRQ1 Fiches technique(HTML) 5 Page - Texas Instruments |
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5 / 54 page  TPS57160-Q1 www.ti.com SLVSAP1E – DECEMBER 2010 – REVISED MARCH 2015 7.4 Thermal Information DGQ (MSOP- DRC (VSON) PowerPAD) THERMAL METRIC(1)(2) UNIT 10 PINS 10 PINS RθJA Junction-to-ambient thermal resistance (standard board) 67.4 45.2 RθJA Junction-to-ambient thermal resistance (custom board)(3) — 61.5 RθJC(top) Junction-to-case (top) thermal resistance 46.7 52.1 RθJB Junction-to-board thermal resistance 38.4 20.6 °C/W ψJT Junction-to-top characterization parameter 1.9 0.9 ψJB Junction-to-board characterization parameter 38.1 20.8 RθJC(bot) Junction-to-case (bottom) thermal resistance 15.9 5.2 (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information. (3) Test boards conditions: (a) 3 inches x 3 inches, 2 layers, thickness: 0.062 inch (b) 2 oz. copper traces located on the top of the PCB (c) 2 oz. copper ground plane, bottom layer (d) 6 thermal vias (13mil) located under the device package 7.5 Electrical Characteristics TJ = –40°C to 150°C, VIN = 3.5 V to 60 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN PIN) Operating input voltage 3.5 60 V Internal undervoltage lockout No voltage hysteresis, rising and falling 2.5 V threshold EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V 1.5 4 Shutdown supply current EN = 0 V, 125°C, 3.5 V ≤ VIN ≤ 60 V 1.9 6.5 μA Operating nonswitching supply VSENSE = 0.83 V, VIN = 12 V, TJ = 25°C 116 136 current ENABLE AND UVLO (EN PIN) No voltage hysteresis, rising and falling, Enable threshold voltage 1.15 1.25 1.36 V TJ = 25°C Enable threshold +50 mV –3.8 Input current μA Enable threshold –50 mV –0.9 Hysteresis current –2.9 μA VOLTAGE REFERENCE Voltage reference 0.792 0.8 0.808 V HIGH-SIDE MOSFET VIN = 3.5 V, BOOT-PH = 3 V 300 On-resistance m Ω VIN = 12 V, BOOT-PH = 6 V 200 410 ERROR AMPLIFIER Input current 50 nA Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V 97 μMhos –2 μA < ICOMP < 2 μA, VCOMP = 1 V, Error amplifier transconductance (gM) 26 μMhos during slow start VVSENSE = 0.4 V Error amplifier dc gain VVSENSE = 0.8 V 10,000 V/V Error amplifier bandwidth 2700 kHz Error amplifier source/sink V(COMP) = 1 V, 100-mV overdrive ±7 μA COMP to switch current 6 A/V transconductance Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS57160-Q1 |
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