TPS55383PWPR datasheet(5/46 Pages) TI1

No de pièce	TPS55383PWPR

Description	3-A DUAL NON-SYNCHRONOUS CONVERTER WITH INTEGRATED HIGH-SIDE MOSFET AND EXTERNAL COMPENSATION

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TPS55383

,, TPS55386

www.ti.com ......................................................................................................................................................................................... SLUS818 – SEPTEMBER 2008

ELECTRICAL CHARACTERISTICS (continued)

–40°C

≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OVERCURRENT PROTECTION

ICL1

Current limit Channel 1

3.6

4.5

5.6

VILIM2 = VBP

3.6

4.5

5.6

A

ICL2

Current limit Channel 2

VILIM2 = (floating)

2.4

3.0

3.6

VILIM2 = GND

1.15

1.50

1.75

VUV1

Low-level output threshold to declare a fault

Measured at feedback pin.

670

730

mV

VUV2

THICCUP

(3)

Hiccup timeout

10

ms

tON1(oc)

(3)

Minimum overcurrent pulse width

90

150

ns

tON2(oc)

(3)

BOOTSTRAP

RBOOT1,

From BP to BOOT1 or BP to BOOT2,

Bootstrap switch resistance

18

Ω

RBOOT2

IEXT = 50 mA

OUTPUT STAGE (Channel 1 and Channel 2)

TJ = +25°C, VPVDD2 = 8 V

85

RDS(on)

(3)

MOSFET on resistance plus bond wire resistance

m

Ω

–40°C < TJ < +125°C, VPVDD2 = 8 V

85

165

tON(min)

(3)

Minimum controllable pulse width

ISWx peak current > 1 A

(4)

100

200

ns

DMIN

Minimum Duty Cycle

VFB = 0.9 V

0

%

TPS55383 fSW = 300 kHz

90

95

%

DMAX

Maximum Duty Cycle

TPS55386 fSW = 600 kHz

85

90

%

ISW

Switching node leakage current (sourcing)

Outputs OFF

2

12

µA

THERMAL SHUTDOWN

TSD

(3)

Shutdown temperature

148

°C

TSD(hys)

(3)

Hysteresis

20

(3)

Ensured by design. Not production tested.

(4)

See Figure 14 for ISWx peak current <1 A.

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