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TPS55340-Q1 Fiches technique(PDF) 5 Page - Texas Instruments |
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TPS55340-Q1 Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 37 page 5 TPS55340-Q1 www.ti.com SLVSBV5A – JUNE 2014 – REVISED JULY 2016 Product Folder Links: TPS55340-Q1 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated 6.5 Electrical Characteristics VI = 5 V, TJ = –40°C to 150°C, unless otherwise noted. Typical values are at TA = 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage range 2.9 38 V IQ Operating quiescent current into VIN Device non-switching, V(FB) = 2 V 0.5 mA IL(sd) Shutdown current EN = GND 2.7 10 µA V(UVLO) Under-voltage lockout threshold VI(f) 2.5 2.7 V Vhys Under-voltage lockout hysteresis 120 140 160 mV ENABLE AND REFERENCE CONTROL V(EN)(r) EN threshold voltage EN rising input 0.9 1.08 1.3 V V(EN)(f) EN threshold voltage EN falling input 0.74 0.92 1.125 V V(EN)(hys) EN threshold hysteresis 0.16 V R(EN) EN pull down resistor 400 950 1600 k Ω toff Shutdown delay, SS discharge EN high to low 1 ms V(SYNC)H SYN logic high voltage 1.2 V(SYNC)L SYN logic low voltage 0.4 V VOLTAGE AND CURRENT CONTROL Vref Voltage feedback regulation voltage 1.204 1.229 1.254 V TA = 25°C 1.22 1.229 1.238 IIB(FB) Voltage feedback input bias current TA = 25°C 1.6 20 nA I(COMP_sink) COMP-pin sink current V(FB) = Vref + 200 mV, V(COMP) = 1 V 42 µA IS(COMP) COMP-pin source current V(FB) = Vref – 200 mV, V(COMP) = 1 V 42 µA VC(COMP) COMP pin Clamp Voltage High Clamp, V(FB) = 1 V 3.1 V Low Clamp, V(FB) = 1.5 V 0.75 V(COMP_th) COMP pin threshold Duty cycle = 0% 1.04 V gm(ea) Error amplifier transconductance 240 360 440 µmho RO(ea) Error amplifier output resistance 10 MΩ ƒ(ea) Error amplifier crossover frequency 500 kHz FREQUENCY ƒ Frequency R(FREQ) = 480 kΩ 75 94 130 kHz R(FREQ) = 80 kΩ 460 577 740 R(FREQ) = 40 kΩ 920 1140 1480 R(FREQ) = 18 kΩ 2261 2549 2837 Dmax Maximum duty cycle V(FB) = 1 V, R(FREQ) = 80 kΩ 89% 96% V(FREQ) FREQ pin voltage 1.25 V tW(on)min Minimum on pulse width R(FREQ) = 80 kΩ 77 107 ns POWER SWITCH rDS(on) N-channel MOSFET on-resistance VI = 5 V 60 110 mΩ VI = 3 V 70 120 ILN_NFET N-channel leakage current VDS = 25 V, TA = 25°C 2.1 µA OCP AND SS ILIM N-Channel MOSFET current limit D = Dmax 5.25 6.6 7.75 A IB(SS) Soft-start bias current V(SS) = 0 V 6 µA THERMAL SHUTDOWN Tsd Thermal shutdown threshold 165 °C Thys Thermal shutdown threshold hysteresis 15 °C |
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