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BY550-400 Fiches technique(PDF) 1 Page - Diode Semiconductor Korea |
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BY550-400 Fiches technique(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces, 1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 550-200 BY 550-400 BY 550-600 BY 550-800 BY 550-1000 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 5.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 15 - 55 ---- + 150 - 55 ---- + 150 BY550-50 --- BY550-1000 5.0 300.0 1.1 100 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 5.0 A 100.0 80 A and similar solvents IF(AV) 35 50 PLASTIC SILICON RECTIFIERS The plastic material carries U/L recognition 94V-0 A DO - 27 IFSM Diffused junction Easily cleaned witn Freon,Alcohol,lsopropanol BY 550-50 BY 550-100 50 100 2. Thermal resistance f rom junction to ambient. A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. IR 10.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
Numéro de pièce similaire - BY550-400 |
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Description similaire - BY550-400 |
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