TPS54310PWPR datasheet(6/28 Pages) TI1

No de pièce	TPS54310PWPR

Description	3-V to 6-V Input, 3-A Output Synchronous-Buck PWM Switcher With Integrated FETs

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Fabricant	TI1 [Texas Instruments]

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TPS54310

SLVS412E – DECEMBER 2001 – REVISED DECEMBER 2014

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Electrical Characteristics (continued)

TJ = –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Ramp amplitude (peak-to-peak)(1)

1

V

Minimum controllable on time(1)

200

ns

Maximum duty cycle

90%

ERROR AMPLIFIER

Error amplifier open loop voltage gain

1 k

Ω COMP to AGND(1)

90

110

dB

Error amplifier unity gain bandwidth

Parallel 10 k

Ω, 160 pF COMP to AGND(1)

3

5

MHz

Error amplifier common-mode input voltage

Powered by internal LDO(1)

0

VBIAS

V

range

IIB

Input bias current, VSENSE

VSENSE = Vref

60

250

nA

VO

Output voltage slew rate (symmetric), COMP

1

1.4

V/µs

PWM COMPARATOR

PWM comparator propagation delay time,

PWM comparator input to PH pin (excluding

10 mV overdrive(1)

70

85

ns

dead time)

SLOW-START/ENABLE

Enable threshold voltage, SS/ENA

0.82

1.20

1.40

V

Enable hysteresis voltage, SS/ENA(1)

0.03

V

Falling edge deglitch, SS/ENA(1)

2.5

µs

Internal slow-start time

2.6

3.35

4.1

ms

Charge current, SS/ENA

SS/ENA = 0 V

3

5

8

µA

Discharge current, SS/ENA

SS/ENA = 0.2 V, VI = 2.7 V

1.5

2.3

4

mA

POWER GOOD

Power good threshold voltage

VSENSE falling

90

%Vref

Power good hysteresis voltage(4)

3

%Vref

Power good falling edge deglitch(4)

35

µs

Output saturation voltage, PWRGD

I(sink) = 2.5 mA

0.18

0.30

V

Leakage current, PWRGD

VI = 5.5 V

1

µA

CURRENT LIMIT

VI = 3 V, output shorted

(4)

4

6.5

Current limit trip point

A

VI = 6 V, output shorted

(4)

4.5

7.5

Current limit leading edge blanking time(4)

100

ns

Current limit total response time(4)

200

ns

THERMAL SHUTDOWN

Thermal shutdown trip point(4)

135

150

165

°C

Thermal shutdown hysteresis(4)

10

°C

OUTPUT POWER MOSFETS

IO = 3 A, VI = 6 V

(4)

59

88

rDS(o

Power MOSFET switches

m

Ω

n)

IO = 3 A, VI = 3 V

(5)

85

136

(4)

Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design.

(5)

Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design.

6

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