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TPD4E001QDBVRQ1 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPD4E001QDBVRQ1 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 18 page GND V CC 1 2 6 3 5 4 I 1 O IO4 IO3 IO2 TPD4E001-Q1 www.ti.com SLLSEG0D – MARCH 2013 – REVISED AUGUST 2015 5 Pin Configuration and Functions DBV Package 6-Pin SOT-23 Top View Pin Functions PIN TYPE DESCRIPTION NAME NO. GND 2 GND Ground IO1 1 IO2 3 I/O ESD-protected channel IO3 4 IO4 6 VCC 5 I Power-supply input. Bypass VCC to GND with a 0.1-μF ceramic capacitor. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage –0.3 7 V VIO I/O voltage tolerance –0.3 VCC + 0.3 V IPP Peak pulse current (Tp = 8/20 µs)(2) 5.5 A PPP Peak pulse power (Tp = 8/20 µs)(2) 100 W TA Free air operating temperature –40 125 °C TJ Junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5. 6.2 ESD Ratings: AEC Q100 VALUE UNIT Human-body model (HBM), per AEC Q100-002(1) ±15000 Electrostatic V(ESD) V discharge Charged-device model (CDM), per AEC Q100-011 ±750 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 ESD Ratings: IEC 61000-4-2 VALUE UNIT IEC 61000-4-2 contact discharge ±8000 V(ESD) Electrostatic discharge V IEC 61000-4-2 air-gap discharge ±15000 Copyright © 2013–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: TPD4E001-Q1 |
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