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TPD1E10B06-Q1

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SLVSDN7A – AUGUST 2016 – REVISED AUGUST 2016

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Copyright © 2016, Texas Instruments Incorporated

Feature Description (continued)

7.3.6 Dynamic Resistance

which prevents system damage during ESD events.

7.3.7 DC Breakdown Voltage

The DC breakdown voltage between the IO pins is a minimum of 6 V. This ensures that sensitive equipment is

protected from surges above the reverse standoff voltage of 5.5 V.

7.3.8 Ultra Low Leakage Current

The IO pins feature an ultra-low leakage current of 100 nA (maximum) with a bias of 5 V.

7.3.9 Clamping Voltage

A).

7.3.10 Industrial Temperature Range

This device features an industrial operating range of –40°C to +125°C

7.3.11 Space-Saving Footprint

This device features a space-saving, industry standard 0402 footprint.

7.4 Device Functional Modes

The TPD1E10B06-Q1 is a passive clamp that has low leakage during normal operation when the voltage

During IEC ESD events, transient voltages as high as ±30 kV can be clamped between the two pins. When the

voltages on the protected lines fall below the trigger voltage, the device reverts back to the low leakage passive

state.