IO

GND

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8

TPD1E01B04

SLVSDG3B – MARCH 2016 – REVISED MAY 2016

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7 Detailed Description

7.1 Overview

The TPD1E01B04 device is a bidirectional ESD Protection Diode with ultra-low capacitance. This device can

dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-

low capacitance makes this device ideal for protecting any super high-speed signal pins including Thunderbolt 3.

The low capacitance allows for extremely low losses even at RF frequencies such as USB 3.1 Gen 2,

Thunderbolt 3, or antenna applications.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 IEC 61000-4-2 ESD Protection

The I/O pins can withstand ESD events up to ±15-kV contact and ±17-kV air gap. An ESD-surge clamp diverts

the current to ground.

7.3.2 IEC 61000-4-4 EFT Protection

The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-

Ω

impedance). An ESD-surge clamp diverts the current to ground.

7.3.3 IEC 61000-4-5 Surge Protection

The I/O pins can withstand surge events up to 2.5 A and 27 W (8/20 µs waveform). An ESD-surge clamp diverts

this current to ground.

7.3.4 IO Capacitance

The capacitance between each I/O pin to ground is 0.18 pF (typical) and 0.20 pF (maximum). This device

supports data rates up to 20 Gbps.

7.3.5 DC Breakdown Voltage

The DC breakdown voltage of each I/O pin is ±6.4 V (typical). This ensures that sensitive equipment is protected

from surges above the reverse standoff voltage of ±3.6 V.

7.3.6 Ultra Low Leakage Current

The I/O pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of ±2.5 V

7.3.7 Low ESD Clamping Voltage

7.3.8 Supports High Speed Interfaces

This device is capable of supporting high speed interfaces up to 20 Gbps, because of the extremely low IO

capacitance.

7.3.9 Industrial Temperature Range

This device features an industrial operating range of –40°C to +125°C.